? 2006 ixys all rights reserved symbol test conditions maximum ratings v dss t j = 25 c to 175 c 100 v v dgr t j = 25 c to 175 c; r gs = 1 m ? 100 v v gss continuous 20 v v gsm transient 30 v i d25 t c = 25 c 110 a i d(rms) external lead current limit 75 a i dm t c = 25 c, pulse width limited by t jm 250 a i ar t c = 25 c60a e ar t c = 25 c40mj e as t c = 25 c 1.0 j dv/dt i s i dm , di/dt 100 a/ s, v dd v dss , 10 v/ns t j 150 c, r g = 4 ? p d t c = 25 c 480 w t j -55 ... +175 c t jm 175 c t stg -55 ... +150 c t l 1.6 mm (0.062 in.) from case for 10 s 300 c t sold plastic body for 10 s 260 c m d mounting torque (to-247) 1.13/10 nm/lb.in. f c mounting force (plus220) 11..65 / 2.5..15 n/lb weight to-247 6 g plus220 4 g g = gate d = drain s = source tab = drain ds99212e(01/06) symbol test conditions characteristic values (t j = 25 c, unless otherwise specified) min. typ. max. bv dss v gs = 0 v, i d = 250 a 100 v v gs(th) v ds = v gs , i d = 4 ma 2.5 5.0 v i gss v gs = 20 v dc , v ds = 0 100 na i dss v ds = v dss 25 a v gs = 0 v t j = 150 c 250 a r ds(on) v gs = 10 v, i d = 0.5 i d25 15 m ? pulse test, t 300 s, duty cycle d 2 % polarht tm hiperfet power mosfet v dss = 100 v i d25 =110a r ds(on) 15 m ? ? ? ? ? t rr 150 ns n-channel enhancement mode fast intrinsic diode avalanche rated features l fast intrinsic diode l international standard packages l unclamped inductive switching (uis) rated l low package inductance - easy to drive and to protect advantages l easy to mount l space savings l high power density ixfh 110n10p ixfv 110n10p ixfv 110n10ps g d s to-247 (ixfh) (tab) g s d plus220 (ixfv) d (tab) g s d (tab) plus220smd (ixfv...s)
ixys reserves the right to change limits, test conditions, and dimensions. ixfh 110n10p ixfv110n10p ixfv 110n10ps symbol test conditions characteristic values (t j = 25 c, unless otherwise specified) min. typ. max. g fs v ds = 10 v; i d = 0.5 i d25 , pulse test 30 40 s c iss 3550 pf c oss v gs = 0 v, v ds = 25 v, f = 1 mhz 1370 pf c rss 440 pf t d(on) 21 ns t r v gs = 10 v, v ds = 0.5 v dss , i d = 60 a 25 ns t d(off) r g = 4 ? (external) 65 ns t f 25 ns q g(on) 110 nc q gs v gs = 10 v, v ds = 0.5 v dss , i d = 0.5 i d25 25 nc q gd 62 nc r thjc 0.31 c/w r thcs (to-247) 0.21 c/w source-drain diode characteristic values (t j = 25 c, unless otherwise specified) symbol test conditions min. typ. max. i s v gs = 0 v 110 a i sm repetitive 250 a v sd i f = i s , v gs = 0 v, 1.5 v pulse test, t 300 s, duty cycle d 2 % t rr i f = 25 a, -di/dt = 100 a/ s 150 ns q rm v r = 50 v, v gs = 0 v 0.6 c to-247 (ixfh) outline dim. millimeter inches min. max. min. max. a 4.7 5.3 .185 .209 a 1 2.2 2.54 .087 .102 a 2 2.2 2.6 .059 .098 b 1.0 1.4 .040 .055 b 1 1.65 2.13 .065 .084 b 2 2.87 3.12 .113 .123 c .4 .8 .016 .031 d 20.80 21.46 .819 .845 e 15.75 16.26 .610 .640 e 5.20 5.72 0.205 0.225 l 19.81 20.32 .780 .800 l1 4.50 .177 ? p 3.55 3.65 .140 .144 q 5.89 6.40 0.232 0.252 r 4.32 5.49 .170 .216 s 6.15 bsc 242 bsc terminals: 1 - gate 2 - drain 3 - source tab - drain 1 2 3 plus220 (ixfv) outline ixys mosfets and igbts are covered by 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 b1 6,683,344 6,727,585 one or moreof the following u.s. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 b1 6,534,343 6,710,405b2 6,759,692 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 b1 6,583,505 6,710,463 6771478 b2 plus220smd (ixfv_s) outline
? 2006 ixys all rights reserved fig. 2. extended output characteristics @ 25 o c 0 20 40 60 80 100 120 140 160 180 200 220 012345678910 v d s - volts i d - amperes v gs = 10v 7v 6v 8v 9v fig. 3. output characteristics @ 150 o c 0 10 20 30 40 50 60 70 80 90 100 110 0 0.5 1 1.5 2 2.5 3 3.5 4 v d s - volts i d - amperes v gs = 10v 9v 5v 6v 7v 8v fig. 1. output characteristics @ 25 o c 0 10 20 30 40 50 60 70 80 90 100 110 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2 v d s - volts i d - amperes v gs = 10v 9v 7v 5v 6v 8v fig. 4. r ds(on ) norm alized to 0.5 i d25 value vs. junction temperature 0.6 0.8 1 1.2 1.4 1.6 1.8 2 2.2 2.4 -50 -25 0 25 50 75 100 125 150 175 t j - degrees centigrade r d s ( o n ) - normalize d i d = 110a i d = 55a v gs = 10v fig. 6. drain current vs. case temperature 0 10 20 30 40 50 60 70 80 -50 -25 0 25 50 75 100 125 150 175 t c - degrees centigrade i d - amperes external lead current limit fig. 5. r ds(on) norm alized to 0.5 i d25 value vs. drain current 0.6 0.8 1 1.2 1.4 1.6 1.8 2 2.2 2.4 2.6 2.8 3 0 25 50 75 100 125 150 175 200 225 250 i d - amperes r d s ( o n ) - normalize d t j = 25 o c v gs = 10v t j = 175 o c v gs = 15v ixfh 110n10p ixfv110n10p ixfv 110n10ps
ixys reserves the right to change limits, test conditions, and dimensions. ixfh 110n10p ixfv110n10p ixfv 110n10ps fig. 11. capacitance 100 1000 10000 0 5 10 15 20 25 30 35 40 v ds - volts capacitance - picofarads c iss c oss c rss f = 1mhz fig. 10. gate charge 0 1 2 3 4 5 6 7 8 9 10 0 20406080100120 q g - nanocoulombs v g s - volts v ds = 50v i d = 55a i g = 10ma fig. 7. input admittance 0 25 50 75 100 125 150 175 200 225 250 45 67891011 v g s - volts i d - amperes t j = -40 o c 25 o c 150 o c fig. 8. transconductance 0 10 20 30 40 50 60 70 0 50 100 150 200 250 300 i d - amperes g f s - siemens t j = -40 o c 25 o c 150 o c fig. 9. source current vs. source-to-drain voltage 0 50 100 150 200 250 300 350 0.40.60.8 1 1.21.41.61.8 2 v s d - volts i s - amperes t j = 150 o c t j = 25 o c fig. 12. forw ard-bias safe operating area 10 100 1000 1 10 100 1000 v d s - volts i d - amperes 100s 1ms dc t j = 175 o c t c = 25 o c r ds(on) limit 10ms 25s
? 2006 ixys all rights reserved fig. 13. m axim um trans ie nt the rm al re s is tance 0.01 0.10 1.00 0.1 1 10 100 1000 pu ls e w id th - m illis e c onds r ( t h ) j c - oc / w ixfh 110n10p ixfv110n10p ixfv 110n10ps
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